 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 File Number 3206.5 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49007. Features * 70A, 60V * rDS(on) = 0.014 * Temperature Compensated PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve (Single Pulse) * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFG70N06 RFP70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06 Symbol D G NOTE: When ordering use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 4-474 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFG70N06, RFP70N06, RF1S70N06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06SM 60 60 70 Refer to Peak Current Curve 20 Refer to UIS Curve 150 1.0 -55 to 175 300 260 UNITS V V A V A W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RJC RJA TO-220 and TO-263 TO-247 VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 48V, ID = 70A, RL = 0.68 Ig(REF) = 2.2mA (Figure 13) TEST CONDITIONS ID = 250A, VGS = 0V (Figure 11) VGS = VDS, ID = 250A (Figure 10) VDS = 60V, VGS = 0V VDS = 0.8 x Rated BVDSS, TC = 150oC VGS = 20V ID = 70A, VGS = 10V (Figure 9) VDD = 30V, ID 70A, RL = 0.43, VGS = 10V, RGS = 2.5 (Figure 13) MIN 60 2 TYP 12 50 40 15 185 100 5.5 3000 900 300 MAX 4 1 25 100 0.014 125 125 215 115 6.5 1.0 62 30 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300ms, duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5). SYMBOL VSD trr ISD = 70A ISD = 70A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns 4-475 RFG70N06, RFP70N06, RF1S70N06SM Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 25 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 Unless Otherwise Specified 80 70 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 0.5 THERMAL IMPEDANCE ZJC, NORMALIZED 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 500 1000 100 100s IDM, PEAK CURRENT (A) ID, DRAIN CURRENT (A) TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - T C I = I 25 ---------------------- 150 VGS = 10V 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1ms 10ms 100ms DC 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 1 100 50 10-5 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY 4-476 RFG70N06, RFP70N06, RF1S70N06SM Typical Performance Curves 300 IAS, AVALANCHE CURRENT (A) Unless Otherwise Specified (Continued) 100 STARTING TJ = 25oC ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 200 VGS = 20V 160 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 6V VGS = 5V VGS = 4.5V VGS = 10V VGS = 8V VGS = 7V 120 80 STARTING TJ = 150oC 10 0.01 40 1 0.1 tAV, TIME IN AVALANCHE (ms) 10 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 200 160 -55oC 25oC 175oC NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V 2.5 2 PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 70A 120 1.5 80 1 40 0.5 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 NORMALIZED GATE THRESHOLD VOLTAGE 1.5 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A 2.0 ID = 250A 1.5 1.0 1.0 0.5 0.5 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-477 RFG70N06, RFP70N06, RF1S70N06SM Typical Performance Curves 5000 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS Unless Otherwise Specified (Continued) 60 10 VGS, GATE TO SOURCE VOLTAGE (V) 4000 C, CAPACITANCE (pF) CISS 3000 VDD = BVDSS 45 RL = 0.86 IG(REF) = 2.2mA VGS = 10V 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS VDD = BVDSS 7.5 30 5 2000 COSS 1000 CRSS 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 15 2.5 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) 0 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON VDS VDS VGS RL + tOFF td(OFF) tr tf 90% td(ON) 90% DUT RGS VGS - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. SWITCHING WAVEFORMS 4-478 RFG70N06, RFP70N06, RF1S70N06SM Test Circuits and Waveforms VDS RL VDD VDS VGS = 20V VGS + (Continued) Qg(TOT) Qg(10) VDD VGS VGS = 2V 0 Qg(TH) Ig(REF) 0 VGS = 10V DUT Ig(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORM 4-479 RFG70N06, RFP70N06, RF1S70N06SM PSPICE Electrical Model .SUBCKT RFG70N06 2 1 3 ; CA 12 8 5.56e-9 CB 15 14 5.30e-9 CIN 6 8 2.63e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.18 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.10e-9 LSOURCE 3 7 1.82e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 4.66e-3 RLDRAIN 2 5 10 RGATE 9 20 1.21 RLGATE 1 9 31 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.92e-3 RLSOURCE 3 7 18.2 RVTO 18 19 RVTOMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD GATE 1 LGATE rev 3/20/92 RLDRAIN DPLCAP 10 LDRAIN RSCL2 5 51 RSCL1 + 51 ESCL 50 6 8 + RLGATE 9 20 + EVTO 18 8 RDRAIN 16 11 EBREAK 17 18 MOS2 DBODY + DBREAK 5 2 DRAIN ESG VTO 6 + 21 MOS1 - RGATE RIN CIN 8 RSOURCE 7 RLSOURCE 3 SOURCE LSOURCE S1A 12 S1B CA + EGS 6 8 13 8 14 13 S2A 15 17 S2B 13 CB + EDS 14 5 8 IT RBREAK 18 RVTO 19 VBAT + - - VBAT 8 19 DC 1 VTO 21 6 0.605 .MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8) .MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5) .MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7) .MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6) .MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. 4-480 RFG70N06, RFP70N06, RF1S70N06SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-481 |
Price & Availability of RF1S70N06SM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |